ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory
ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory
Dataset
Overview
Cite this
Overview
Dominic Lane (Creator)
Manus Hayne (Creator)
Peter Hodgson (Creator)
Physics
Quantum Technology Centre
Quantum Nanotechnology
Description
Dataset of electrical measurements for ULTRARAM memory devices on GaAs substrate. Includes, S-D sweeps, retention and endurance.
| Date made available | 2021 |
|---|---|
| Publisher | Lancaster University |
Contact person
rdm@lancaster.ac.uk
Cite this
DataCite
Electronic data
IEEETED_ULTRARAM_DATA.xlsx
30.8 MB, application/vnd.openxmlformats-officedocument.spreadsheetml.sheet
Dataset
Available under license: CC BY
Date added: 12/02/21
