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Universal Memory
for the AI Era
for the AI Era
DRAM-Class Speed
Non-Volatile Storage
Ultra-Low Energy
Awards
ULTRARAM™
Tech Overview
ULTRARAM™ is a remarkable, patented, memory technology developed by Lancaster University. It exploits a quantum-mechanical process called resonant tunnelling, allowing ULTRARAM™ to deliver non-volatility with fast and energy-efficient write and erase, resulting in high endurance. This combination of properties was thought to be unachievable until now. ULTRARAM™ has the non-volatility of flash, with a performance that is expected to exceed that of DRAM.
The $165bn pa memory market is dominated by dynamic random-access memory (DRAM, $100bn) and NAND flash ($60bn). Flash is non-volatile, retaining data when unpowered, but is slow and has poor program/erase cycling endurance. In contrast, DRAM is fast with excellent endurance, but it is volatile, and requires data to be constantly refreshed. For decades there has been a quest for a memory that combines their advantages without their disadvantages, i.e. a memory that is fast and non-volatile, with high endurance and ultra-low switching energies; a so-called ‘universal memory’. ULTRARAM™ has achieved these universal memory characteristics.
Explainer Video
AI is Limited by Memory
ULTRARAM™
Artificial intelligence is transforming every industry, but the energy cost of moving data is becoming one of the biggest constraints on future computing performance.
From hyperscale AI data centres to intelligent edge devices, memory is increasingly the bottleneck.
AI is Limited by Memory
ULTRARAM™
ULTRARAM™
Today’s Memory Hierarchy Was Not Built for AI
- Data movement dominates system energy consumption
- Memory bandwidth limits performance
- DRAM and flash require constant trade-offs between speed, power and persistence
The future of AI requires a different approach.
A New Class of Memory
ULTRARAM™ combines the speed of DRAM with the persistence of flash memory in a single device.
Built using patented quantum resonant tunnelling structures within III-V semiconductors, ULTRARAM offers a fundamentally new approach to storing and accessing data.
Potential Advantages
- High-speed access
- Non-volatile operation
- Ultra-low energy consumption
- Long endurance
- Simplified memory architectures
Program Erase / Switching Energies
10,000 x
Lower than other emerging memories
100 x
Lower than DRAM
Program Erase / Switching Energies
1,000 x
Lower than Flash
Enabling the Future of AI Infrastructure
By reducing the energy and performance penalties associated with data movement, ULTRARAM has the potential to support the next generation of:
AI Data Centres:
Reducing memory power consumption and improving system efficiency.
Edge AI:
Enabling intelligent devices to operate closer to where data is created.
High-Performance Computing:
Supporting data-intensive applications that demand both speed and efficiency.
Secure & Sovereign Computing:
Providing new opportunities for defence, critical infrastructure and secure systems.
Introducing ULTRARAM-Neuro™
Extending the ULTRARAM platform into compute-in-memory and neuromorphic architectures.
ULTRARAM-Neuro™ is being developed to explore new approaches to AI acceleration by bringing memory and computation closer together.
Future Applications
- Compute-in-memory AI
- Agentic edge AI
- Neuromorphic systems
- Ultra-low power inference
- Autonomous intelligent platforms
ULTRARAM™
Proven Device Physics. Global Ecosystem.
ULTRARAM™ is based on patented technology developed at Lancaster University and is supported by an international ecosystem of semiconductor partners and research collaborators.
Protected by a growing international patent portfolio.
ULTRARAM™
Building a Platform for the Next Generation of Computing
Quinas is developing a new memory platform designed for the demands of artificial intelligence, high-performance computing and future intelligent systems.
Our mission is simple:
Eliminate the memory bottleneck limiting the future of AI.
Partner With Us
Quinas is working with investors, industrial partners, foundries, researchers and system developers to bring ULTRARAM™ to market.
Our Team
QuInAs Team
Our Advisors
QuInAs Advisors
Prof Avirup Dasgupta
Dr. J. Iwan Davies
Contact Us
UK HQ
QUINAS Technology Limited
167-169 Great Portland Street 5th Floor
London W1W 5PF
United Kingdom
Registered in England and Wales.
Company Registration No. 14673840.
R&D Labs
QUINAS Technology
A035, Faraday Buildings
Physics Avenue, Bailrigg
Lancaster LA1 4YB
United Kingdom
A035, Faraday Buildings
Physics Avenue, Bailrigg
Lancaster LA1 4YB
United Kingdom
EU Design Center
QuInAs Tech (Malta) Ltd
Sir Temi Zammit Buildings
San Gwann Industrial Estate
San Gwann, SGN 3000
Malta
Quinas Tech (Malta) Ltd
Ewropa Business Centre,
Level 3, Suite 701,
Dun Karm Street,
B’ Kara, BKR9034, Malta
APAC
APAC
TAIWAN TECH ARENA
No.2, Sec. 4, Nanjing E. Rd., Songshan Dist.,
Taipei City 105037, Taiwan (R.O.C.)
Taiwanarena.tech | Quinas
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Acknowledgements
ULTRARAM is developed in partnership with Lancaster University and funded by the EPSRC (under IAA grant EP/X525583/1 and the Future Compound Semiconductor Manufacturing Hub grant EP/P006973/1), by the Materials Social Futures doctoral training Program of the Leverhulme Trust, by the European Commission via ATTRACT (grants 777222 and 101004462), by MSCA-ITN QUANTIMONY (grant 956548) and by the Innovate UK ICURe program.
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